3D Parallel Simulations of Fluctuation Effects in pHEMTs
نویسنده
چکیده
The use of 3D simulations is essential in order to study the effects of fluctuations when devices are scaled to deep submicron dimensions. A 3D drift-diffusion device simulator has been developed to effectively simulate pseudomorphic high electron mobility transistors (pHEMTs) on a distributed memory multiprocessor computer. The drift-diffusion equations are discretized using a finite element method on an unstructured tetrahedral mesh. The obtained set of equations is solved in parallel on an arbitrary number of processors using the message-passing interface library. We have applied our simulator to a 120 nm pHEMT based on the Al0.3Ga0.7As/In0.2Ga0.8As interface and carried out a calibration to real experimental data.
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تاریخ انتشار 2004